| 制造商 | 部件名 | 数据表 | 功能描述 |
MagnaChip Semiconductor...
|
MMD60R580P |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMD60R580PB |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMIS60R580P |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMF60R580P |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMD60R580Q |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMP60R580P |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
| MMF60R580Q |
1Mb/10P |
600V 0.58(ohm) N-channel MOSFET |
STMicroelectronics
|
STW10NC70Z |
249Kb/8P |
N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET |
Analog Microelectronics
|
TO-252-2 |
39Kb/1P |
A : MIN 0.43 MAX 0.58 B : MIN 1.60 MAX 1.95 |
EHAOAN.
|
EH-C191TGKT-5A |
1Mb/7P |
Dimension( L/W/H) : 1.6 x 0.8 x 0.58 mm |
ON Semiconductor
|
NTMFS0D55N03CG |
139Kb/6P |
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 m, 462 A
June, 2020 ??Rev. 1 |
Vishay Siliconix
|
VT5200-E3 |
146Kb/6P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 12-Dec-16 |
| VT10200C-M3 |
158Kb/4P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 01-Dec-16 |
| VT5200 |
148Kb/5P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 14-Aug-13 |
Analog Devices
|
ADG858 |
299Kb/16P |
0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP
REV. 0 |
Vishay Siliconix
|
V30100PW-M3 |
87Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A
Revision: 20-Dec-13 |
Tyco Electronics
|
5414459-1 |
960Kb/34P |
BNC Connectors (50 ohm/75 ohm) |
Vishay Siliconix
|
V20M120M-E3 |
98Kb/4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A
Revision: 11-May-16 |
Willow Technologies Ltd
|
LRC |
91Kb/2P |
Fractional Ohm |
List of Unclassifed Man...
|
8255 |
101Kb/3P |
93 Ohm |
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