制造商 | 部件名 | 数据表 | 功能描述 |
Siemens Semiconductor G...
|
HYB41256 |
381Kb/15P |
262,144 BIT DYNAMIC RAM |
Texas Instruments
|
TMS4256 |
1Mb/23P |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
Toshiba Semiconductor
|
TC514258P |
1Mb/18P |
262,144 WORD X4 BIT DYNAMIC RAM |
Texas Instruments
|
SMJ4256 |
947Kb/19P |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORY |
Toshiba Semiconductor
|
TC514256AP |
775Kb/17P |
262,144 WORD x4 BIT DYNAMIC RAM |
OKI electronic componet...
|
MSM41256A |
699Kb/13P |
262,144-WORD x 1-BIT DYNAMIC RAM |
NTE Electronics
|
NTE21256 |
42Kb/6P |
262,144-Bit Dynamic Random Access Memory (DRAM) |
OKI electronic componet...
|
MSM532001B |
118Kb/4P |
262,144-Word x 8-Bit Mask ROM |
Fujitsu Component Limit...
|
MB81464-12 |
1Mb/22P |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY |
OKI electronic componet...
|
MSM5416272 |
339Kb/37P |
262,144-Word x 16-Bit Multiport DRAM |
MSM5416282 |
367Kb/37P |
262,144-Word x 16-Bit Multiport DRAM |
MSM548263 |
392Kb/40P |
262,144-Word x 8-Bit Multiport DRAM |
MSM54V16283 |
389Kb/42P |
262,144-Word x 16-Bit Multiport DRAM |
Toshiba Semiconductor
|
TC554161FTL |
439Kb/9P |
262,144-WORD BY 16-BIT STATIC RAM 1997-06-12 |
TC554161FTL-70L |
420Kb/9P |
262,144-WORD BY 16 BIT STATIC RAM |
TC514260BJ |
1Mb/29P |
262,144 WORD X 16 BIT DYNAMIC RAM |
Integrated Silicon Solu...
|
24C256 |
51Kb/12P |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
OKI electronic componet...
|
MSM514252A |
358Kb/33P |
262,144-Word x 4-Bit Multiport DRAM |
MSM5416262 |
339Kb/37P |
262,144-Word x 16-Bit Multiport DRAM |
Toshiba Semiconductor
|
TC51V4260DFTS-60 |
426Kb/7P |
262,144 WORD X 16 BIT DYNAMIC RAM |