制造商 | 部件名 | 数据表 | 功能描述 |
California Eastern Labs
|
NX5311 |
160Kb/4P |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS |
NX5322 |
190Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE |
NX5312 |
285Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE |
NX5310 |
293Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE |
NX6314EH |
903Kb/6P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS |
NX5321 |
190Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE |
NX5311S |
161Kb/4P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS |
NX6506 |
353Kb/5P |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS |
NX5312 |
347Kb/5P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS |
NX5304 |
167Kb/5P |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS |
NX5310 |
342Kb/5P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS |
PS720C-1A |
211Kb/10P |
4-PIN SOP, 0.1 廓 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |