制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors
|
BGY67A112 |
100Kb/8P |
200 MHz, 24 dB gain reverse amplifier Rev. 5-19 September 2011 |
BGY67 |
55Kb/8P |
200 MHz, 22 dB gain reverse amplifier 2001 Oct 18 |
PMBT3904M |
91Kb/11P |
40 V, 200 mA NPN switching transistor Rev. 01-21 July 2009 |
PMSTA3904 |
80Kb/12P |
40 V, 200 mA NPN switching transistor Rev. 01-21 April 2008 |
BGR269 |
98Kb/8P |
200 MHz, 35 dB gain reverse amplifier Rev. 6-5 August 2010 |
PMBT3906M |
92Kb/11P |
40 V, 200 mA PNP switching transistor Rev. 01-22 July 2009 |
PMST3906 |
84Kb/10P |
40 V, 200 mA PNP switching transistor Rev. 05-29 April 2009 |
NX3008PBKW |
883Kb/16P |
30 V, 200 mA P-channel Trench MOSFET Rev. 1-1 August 2011 |
PMBT3946VPN |
118Kb/15P |
40 V, 200 mA NPN/PNP switching transistor Rev. 01-31 August 2009 |
2PD601BSL |
317Kb/13P |
50 V, 200 mA NPN general-purpose transistors Rev. 1-28 June 2010 |
RB520S30 |
267Kb/12P |
200 mA low VF MEGA Schottky barrier rectifier Rev. 01-6 October 2009 |
PMBT3906VS |
94Kb/11P |
40 V, 200 mA PNP/PNP switching transistor Rev. 01-20 August 2009 |
PMEG3002EJ |
103Kb/13P |
200 mA low VF MEGA Schottky barrier rectifier Rev. 01-15 May 2009 |
RB521S30 |
258Kb/12P |
200 mA low VF MEGA Schottky barrier rectifier Rev. 01-6 October 2009 |
NX3008PBKT |
879Kb/16P |
30 V, 200 mA P-channel Trench MOSFET Rev. 1-1 August 2011 |
PMBT3904VS |
93Kb/11P |
40 V, 200 mA NPN/NPN switching transistor Rev. 01-8 July 2009 |
PMEG6002EJ |
104Kb/13P |
200 mA low VF MEGA Schottky barrier rectifier Rev. 01-15 May 2009 |
2PB709BRL |
324Kb/13P |
50 V, 200 mA PNP general-purpose transistors Rev. 1-28 June 2010 |
PMEG4002EJ |
103Kb/13P |
200 mA low VF MEGA Schottky barrier rectifier Rev. 01-15 May 2009 |
MPX2202 |
412Kb/19P |
200 kPa On-Chip Temperature Compensated Silicon Pressure Sensors Rev 8, 10/2012 |