制造商 | 部件名 | 数据表 | 功能描述 |
LAPIS Semiconductor Co....
|
MR45V032A |
280Kb/21P |
32k(4,096-Word ??8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI |
List of Unclassifed Man...
|
MR45V032A |
279Kb/21P |
32k (4,096-Word x 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI |
Renesas Technology Corp
|
R1LP5256E |
245Kb/15P |
256Kb Advanced LPSRAM (32k word x 8bit) |
R1LV5256E |
356Kb/13P |
256Kb Advanced LPSRAM (32k word x 8bit) |
R1LV5256E |
289Kb/15P |
256Kb Advanced LPSRAM (32k word x 8bit) |
R1LP5256E |
245Kb/15P |
256Kb Advanced LPSRAM (32k word x 8bit) |
R1LV5256E |
289Kb/15P |
256Kb Advanced LPSRAM (32k word x 8bit) |
Integrated Device Techn...
|
IDT72V70840 |
163Kb/20P |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 4,096 x 4,096 |
Sony Corporation
|
CXK58256 |
285Kb/7P |
32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM |
NEC
|
UPD43257B |
157Kb/20P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD43256B |
231Kb/24P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD43256B |
174Kb/24P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD43256B |
224Kb/28P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
Renesas Technology Corp
|
IDT72V71643 |
656Kb/31P |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 4,096 x 4,096 JANUARY 2002 |
Samsung semiconductor
|
KS24C040 |
300Kb/24P |
4,096/8,192-Bit Serial EEPROM |
Advanced Micro Devices
|
AM27S29 |
270Kb/6P |
4,096-Bit (512x8) Bipolar PROM |
Integrated Silicon Solu...
|
IS93C66-3 |
83Kb/10P |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
NEC
|
UPD43257B |
197Kb/24P |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
Rohm
|
BR93LC66 |
128Kb/12P |
4,096-Bit Serial Electrically Erasable PROM |
Toshiba Semiconductor
|
TMM23256P |
262Kb/6P |
256K BIT(32K WORD x 8 BIT) MASK ROM N-CHANNEL SILICON GATE |