制造商 | 部件名 | 数据表 | 功能描述 |
Cree, Inc
|
CGHV35400F |
829Kb/11P |
400 W, 2900 - 3500 MHz, 50-Ohm Input |
CAB400M12XM3 |
801Kb/9P |
1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module |
PXAE213708NB |
529Kb/5P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz |
PXAE263708NB |
289Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz |
GTVA104001FA |
314Kb/4P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz |
GTRA384802FC |
1Mb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz |
GTRA364002FC |
279Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz |
CGHV37400F |
815Kb/11P |
400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems |