制造商 | 部件名 | 数据表 | 功能描述 |
Hynix Semiconductor
|
HY62V8400 |
369Kb/12P |
512K X 8-bit CMOS SRAM |
HY57V643220D |
229Kb/13P |
4Banks x 512K x 32bits Synchronous DRAM |
HY57V643220CT |
183Kb/12P |
4 Banks x 512K x 32Bit Synchronous DRAM |
HY5V62CF |
353Kb/11P |
4 Banks x 512K x 32Bit Synchronous DRAM |
HY57V653220BTC |
154Kb/12P |
4 Banks x 512K x 32Bit Synchronous DRAM |
HY57V161610ET-I |
482Kb/13P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY57V161610D-I |
574Kb/11P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY57V161610ETP-I |
215Kb/13P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY62V8400A |
181Kb/11P |
512K x8 bit 3.3V Low Power CMOS slow SRAM |
HY57V161610D |
73Kb/13P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY57V161610E |
181Kb/13P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY628400A |
182Kb/11P |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
HY67V161610D |
75Kb/11P |
2 Banks x 512K x 16 Bit Synchronous DRAM |
HY62SF16804B |
311Kb/10P |
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
HY29LV400 |
549Kb/40P |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
HY29F040A |
282Kb/40P |
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
HY29LV800 |
556Kb/40P |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |