| 制造商 | 部件名 | 数据表 | 功能描述 |
Stanson Technology
|
STP9434 |
314Kb/6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STP9235 |
331Kb/6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STP4403 |
321Kb/6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STP4931 |
334Kb/6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STN4488L |
644Kb/7P |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. |
| STN4822 |
516Kb/6P |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. |
| STN9926AA |
233Kb/7P |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. |
| STN9926 |
648Kb/7P |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. |
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