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BEEN 数据表, PDF |
搜索关键字 : 'BEEN' - 的资料共: 144 (5/8) Pages |
制造商 | 部件名 | 数据表 | 功能描述 |
Samsung semiconductor |
KS57C0301 |
182Kb/28P |
The KS57C0301/0302 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core. |
MICORO CRYSTAL SWITZERL... |
VCXO2E |
338Kb/2P |
This SMD oscillator in ceramic package has been specially designed for surface mount using infrared, vapor phase or epoxy techniques. |
International Rectifier |
163CNQ100 |
120Kb/6P |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
TE Connectivity Ltd |
108-133061 |
162Kb/7P |
The product described in this document has not been fully tested to ensure conformance to the requirements outlined below. |
International Rectifier |
163CNQ |
126Kb/6P |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. |
TE Connectivity Ltd |
108-36033 |
286Kb/6P |
The product described in this document has not been fully tested to ensure conformance to the requirements outlined below |
International Rectifier |
163CMQ |
105Kb/5P |
The 163CMQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. |
STANLEY ELECTRIC CO.,LT... |
VFHY1111C-3BX2D-TR |
720Kb/21P |
As for this product, the part number listed in the catalog had been changed because of renewed narrower spec. |
International Rectifier |
400DMQ |
71Kb/5P |
The 400DMQ high current, Schottky rectifier doubler module series has been optimized for very low forward voltage drop, with moderate leakage. |
Samsung semiconductor |
S3C7324 |
273Kb/37P |
The S3C7324 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core, SAM47 |
S3C7335 |
284Kb/41P |
The S3C7335 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core, SAM47 | |
MICORO CRYSTAL SWITZERL... |
MCSO2E |
346Kb/2P |
This SMD oscillator in ceramic package has been specially designed for surface mount using infrared, vapor phase or epoxy techniques. |
Samsung semiconductor |
S3C7031 |
154Kb/25P |
The S3C7031/7032 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core. |
Texas Instruments |
CSD16340Q3 |
392Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. |
List of Unclassifed Man... |
PMODR2R |
234Kb/1P |
The PmodR2R board provides digital-to-analog conversion using a circuit that has been a staple in engineering design for decades. |
Texas Instruments |
CSD17305Q5A |
510Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. |
CSD17522Q5A |
635Kb/12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. | |
Samsung semiconductor |
KS57C5204 |
283Kb/40P |
The KS57C5204/C5208/C5304/C5308/C5312 single-chip CMOS microcontroller has been designed for highperformance using SAM 47 Samsung Arrangeable Microcon |
S3C7515 |
287Kb/42P |
The S3C7515/P7515 single-chip CMOS microcontroller has been designed for high-performance using Samsungs newest 4-bit CPU core, SAM47 | |
Texas Instruments |
CSD16325Q5 |
445Kb/12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. |
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