制造商 | 部件名 | 数据表 | 功能描述 |
Vishay Siliconix
|
VS-GB90SA120U |
288Kb/8P |
Insulated Gate Bipolar Transistor Revision: 31-May-16 |
S868T |
82Kb/3P |
BIPMIC - Cascadable Silicon Bipolar Amplifier Rev. 3, 20-Jan-99 |
S860T |
67Kb/5P |
BIPMIC - Cascadable Silicon Bipolar Amplifier Rev. 3, 20-Jan-99 |
S858TA1 |
83Kb/3P |
BIPMIC - Cascadable Silicon Bipolar Amplifier Rev. 3, 20-Jan-99 |
S858TA3 |
85Kb/3P |
BIPMIC - Cascadable Silicon Bipolar Amplifier Rev. 3, 20-Jan-99 |
GT100DA120U |
177Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10 |
VS-GT175DA120U |
295Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 175 A Revision: 31-May-16 |
VS-GT100DA120U |
176Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12 |
VS-GT180DA120U |
186Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A 01-Jan-2023 |
GB75DA120UP |
179Kb/10P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A Revision: 22-Jul-10 |
VS-GT100DA120UF |
191Kb/11P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A 01-Jan-2022 |
GT100DA60U |
178Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12 |
VS-GT90DA120U |
216Kb/10P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A 01-Jan-2022 |
VS-GT200SA60UP |
176Kb/8P |
Insulated Gate Bipolar Transistor (Trench IGBT), 200 AS 01-Jan-2022 |
VS-GT90SA120U |
202Kb/9P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A 01-Jan-2023 |
VS-GT140DA60U |
295Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A Revision: 31-May-16 |
VS-GT140DA60U |
190Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A 01-Jan-2022 |
VS-GT90SA120U |
203Kb/9P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A 01-Jan-2022 |
VS-GT100DA120UF |
191Kb/11P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A 01-Jan-2023 |
VS-GT200SA60UP |
176Kb/8P |
Insulated Gate Bipolar Transistor (Trench IGBT), 200 A 01-Jan-2023 |