BITS Datasheet(PDF) - TC58FVM7T2AFT65

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC58FVM7T2AFT65	622Kb/69P	128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY 2004-09-01
	TC58FVB160AF	539Kb/41P	16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
	TC58FVT641	593Kb/53P	64-MBIT (8M 횞 8 BITS / 4M 횞 16 BITS) CMOS FLASH MEMORY
	TC58FVT160	1Mb/29P	16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
	TC58FVT321-70	555Kb/48P	32-MBIT (4M 횞 8 BITS / 2M 횞 16 BITS) CMOS FLASH MEMORY
	TC58FVT800FT-85	1Mb/28P	8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
	TC58FVM7B2	649Kb/68P	128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
	TC58NVG0S3AFT05	559Kb/33P	1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM
	TC58128AFT	617Kb/33P	128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM
	TC58FVT321FT-10	560Kb/48P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
	TC581282AXB	507Kb/31P	128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
	TC58256AFT	345Kb/33P	256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
	TC5832FT	1Mb/38P	32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
	TC5816BDC	1Mb/36P	16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
	TC58FVT400FT-10	1Mb/28P	4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
	TMM2018AP	338Kb/6P	16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
	TMM2063AP-10	380Kb/7P	65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
	TC59LM814CFT	2Mb/38P	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
	TC58V64BDC	345Kb/33P	64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
	TC58DVM72A1F	369Kb/34P	128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

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