制造商 | 部件名 | 数据表 | 功能描述 |
Micron Technology
|
MT4LC8M8E1 |
382Kb/20P |
DRAM |
MT4LC4M4B1 |
360Kb/20P |
DRAM |
MT4LC8M8P4 |
397Kb/22P |
DRAM |
Renesas Technology Corp
|
RMHE41A184AGBG |
644Kb/52P |
1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4 |
Micron Technology
|
MT4LC16M4A7 |
350Kb/20P |
DRAM |
MT4LC4M16F5 |
339Kb/19P |
DRAM |
MT4LC4M16R6-1 |
413Kb/24P |
DRAM |
MT4LC4M16R6 |
474Kb/24P |
DRAM |
MT4LC16M4G3 |
386Kb/22P |
DRAM |
Renesas Technology Corp
|
UPD48011318 |
1Mb/51P |
1.1G-BIT L ow Latency DRAM-III Common I/O Burst Length of 2 Feb 01, 2013 |
UPD48011418 |
1Mb/51P |
1.1G-BIT Lo w Latency DRAM-III Common I/O Burst Length of 4 Feb 01, 2013 |
Micron Technology
|
MT48LC16M4A2 |
1Mb/55P |
SYNCHRONOUS DRAM |
MT48LC1M16A1 |
1Mb/51P |
SYNCHRONOUS DRAM |
MT12D436 |
310Kb/17P |
DRAM MODULE |
Samsung semiconductor
|
K4E661612D |
397Kb/36P |
CMOS DRAM |
Transcend Information. ...
|
DDR4 |
406Kb/8P |
DRAM Modules |
Micron Technology
|
MT48LC64M4A2 |
1Mb/62P |
SYNCHRONOUS DRAM |
MT48LC32M4A1 |
3Mb/51P |
SYNCHRONOUS DRAM |
MT4C1M16E5 |
385Kb/24P |
EDO DRAM |
MT32LD3264A |
518Kb/27P |
DRAM MODULE |