制造商 | 部件名 | 数据表 | 功能描述 |
Shenzhen Huazhimei Semi...
|
HM90248 |
628Kb/6P |
Omnipolar竊똌icroPower Hall-Effect Switch |
HM6604BWKR |
1Mb/8P |
Complementary Enhancement Mode Field Effect Transistor |
HM713 |
640Kb/7P |
Single chip Hall effect current sensor |
BSS84KR |
330Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor |
BSS8402DW |
315Kb/6P |
Complementary Pair Enhancement Mode Field Effect Transistor |
HM6210 |
1Mb/6P |
All pole micro power hall effect switch |
HM2301BWKR |
411Kb/6P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
HM4618SP |
665Kb/6P |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
HM603BK |
938Kb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM609BK |
2Mb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM1P10MR |
763Kb/5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |