制造商 | 部件名 | 数据表 | 功能描述 |
Stanson Technology
|
STP4953 |
721Kb/8P |
Dual P Channel Enhancement Mode MOSFET |
STN4920 |
487Kb/7P |
Dual N Channel Enhancement Mode MOSFET |
STN4972 |
422Kb/7P |
Dual N Channel Enhancement Mode MOSFET |
STN8205AA |
167Kb/7P |
Dual N Channel Enhancement Mode MOSFET |
STC4539 |
454Kb/10P |
N&P Pair Enhancement Mode MOSFET |
STN4536 |
708Kb/6P |
Due N Channel Enhancement Mode MOSFET |
STN6562 |
776Kb/6P |
Dual N Channel Enhancement Mode MOSFET |
STP6506 |
844Kb/6P |
Dual P Channel Enhancement Mode MOSFET |
STN8205A |
447Kb/7P |
Dual N Channel Enhancement Mode MOSFET |
STC4301D |
2Mb/8P |
N&P Pair Enhancement Mode MOSFET |
STC6602 |
873Kb/8P |
Dual N&P Channel Enhancement Mode MOSFET |
STC6332 |
421Kb/9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
ST2319SRG |
229Kb/8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STP9235 |
331Kb/6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
STP9434 |
314Kb/6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
ST2318SRG |
221Kb/7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STP4403 |
321Kb/6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
ST3422A |
338Kb/6P |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STN4346 |
352Kb/7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN4426 |
362Kb/6P |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |