制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A...
|
BBY5603WE6327 |
855Kb/7P |
Excellent linearity 2011-06-15 |
IPP16CN10N |
624Kb/12P |
OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) Rev. 1.01 2006-06-02 |
IPP028N08N3G |
463Kb/10P |
OptiMOS짰3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.0 2008-01-25 |
IPB600N25N3G |
426Kb/11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-23 |
IPB200N15N3 |
556Kb/12P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.05 2010-04-28 |
IPB072N15N3G |
424Kb/11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.06 2010-04-19 |
IPP086N10N3G |
480Kb/12P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.5 2010-07-16 |
IPB107N20N3G |
452Kb/11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-21 |
IPB08CN10NG |
413Kb/11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.08 2010-04-26 |
IPP023NE7N3G |
466Kb/10P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.11 2009-11-11 |
IPB108N15N3G |
438Kb/11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.1 2009-12-01 |
2EDN753X |
1Mb/36P |
Dual-channel low-side 5 A gate driver ICs with low output resistance and excellent timing accuracy Rev.1.0 2021-10-29 |