GAIN Datasheet(PDF) - UPC8204TK - California Eastern Labs

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GAIN 数据表, PDF

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搜索关键字 : 'GAIN' - 的资料共: 14 (1/1) Pages

制造商	部件名	数据表	功能描述
California Eastern Labs	UPC8204TK	720Kb/4P	NECs VARIABLE GAIN AMPLIFIER
	MC-7842	31Kb/2P	HIGH GAIN CATV POWER DOUBLER AMPLIFIER
	NE021	184Kb/12P	HIGH INSERTION GAIN: 18.5 dB at 500 MHz
	NESG2046M33	292Kb/4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
	NESG204619	320Kb/4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
	NE3520S03	505Kb/10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3521M04	653Kb/9P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3513M04	1Mb/9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02	333Kb/9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3503M04	394Kb/7P	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
	NESG210719	1Mb/9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
	NESG2021M16	861Kb/11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NE66219	329Kb/6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
	NESG3031M05-T1-A	673Kb/9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

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什么是 GAIN

在电子组件中，增益是指输入信号和输出信号之间电压，电流或功率的扩增比。

换句话说，它的值表明输入信号被DB中通常表示的输出信号扩增了多少。

增益用于各种电子组件，并且在放大器和操作放大器等电路中起着非常重要的作用。

放大器用于放大输入信号以创建输出信号。在这里，增益是代表输出信号与输入信号的扩增比的值。

通常通过将其分为电压增益，当前增益和功率增益来表达增益。

根据输入信号的形状，以不同的方式计算每个增益。

电压增益计算为输入电压和输出电压之间的比率，并且电流增益计算为输入电流和输出电流之间的比率。

功率增益计算为输入功率和输出功率之间的比率，并且通常高于其他收益。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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