制造商 | 部件名 | 数据表 | 功能描述 |
Texas Instruments
|
LMG5200 |
299Kb/23P |
GaN Half-Bridge Power Stage |
LMG3410 |
682Kb/33P |
600-V 12-A Single Channel GaN Power Stage |
LMG3410 |
636Kb/29P |
600-V 12-A Single Channel GaN Power Stage |
LMG3612 |
1Mb/25P |
LMG3612 650-V 120-mΩ GaN FET With Integrated Driver NOVEMBER 2023 |
LMG3616 |
1Mb/25P |
LMG3616 650-V 270-mΩ GaN FET With Integrated Driver NOVEMBER 2023 |
LMG2100R044 |
916Kb/26P |
LMG2100R044 100-V, 35-A GaN Half-Bridge Power Stage JULY 2023 |
LMG3411R150 |
774Kb/27P |
600-V 150-m(ohm) GaN with integrated driver and protection |
LM5113 |
1Mb/15P |
5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
LM5113 |
2Mb/24P |
5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
LMG3410R070 |
1Mb/33P |
600-V 70-m(ohm) GaN with Integrated Driver and Protection |
LMG3411R150 |
786Kb/28P |
600-V 150-m廓 GaN With Integrated Driver And Protection |
LMG3410R070 |
1Mb/32P |
600-V 70-m(ohm) GaN with Integrated Driver and Protection |
LM5113_1211 |
2Mb/24P |
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
LMG3410R050 |
910Kb/27P |
600-V 50-m(ohm) Integrated GaN Power Stage With Overcurrent Protection |
LMG3410R050 |
923Kb/28P |
600-V 50-m(ohm) Integrated GaN power stage with overcurrent protection |
LMG3622 |
1Mb/29P |
LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation REVISED NOVEMBER 2023 |
LMG1210 |
601Kb/23P |
200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time |
LMG3626 |
1Mb/29P |
LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation REVISED NOVEMBER 2023 |
LMG1205 |
1Mb/24P |
100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
TPS7H6003-SP |
2Mb/47P |
TPS7H60x3-SP Radiation-Hardness-Assured 1.3-A, 2.5-A, Half Bridge GaN FET Gate Drivers NOVEMBER 2023 |