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LOSSES 数据表, PDF |
搜索关键字 : 'LOSSES' - 的资料共: 179 (9/9) Pages |
制造商 | 部件名 | 数据表 | 功能描述 |
Siemens Semiconductor G... |
BUP314S |
59Kb/7P |
IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) |
ON Semiconductor |
NTMS4916N |
119Kb/5P |
Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses April, 2010 ??Rev. 0 |
Texas Instruments |
UCC27282-Q1 |
1Mb/35P |
UCC27282-Q1 Automotive 120-V Half-Bridge Driver with Cross Conduction Protection and Low Switching Losses |
Infineon Technologies A... |
IKQ75N120CH3 |
2Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.2 2017-06-09 |
IKQ40N120CH3 |
2Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.2 2017-06-09 |
|
IKY50N120CH3 |
1Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.2 2017-06-09 |
|
Texas Instruments |
CSD16340Q3 |
392Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. |
CSD17302Q5A |
521Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. | |
CSD17304Q3 |
532Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. | |
Infineon Technologies A... |
IKY75N120CH3 |
1Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.2 2017-06-09 |
IKQ50N120CH3 |
2Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.3 2017-06-09 |
|
IKY40N120CH3 |
2Mb/16P |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode V2.2 2017-06-09 |
|
Shenzhen Huazhimei Semi... |
HM25N120T |
548Kb/8P |
DAXIN?셲 IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. |
Texas Instruments |
CSD17305Q5A |
510Kb/11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. |
CSD17522Q5A |
635Kb/12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. | |
CSD16325Q5 |
445Kb/12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. | |
Recom International Pow... |
R-521.2XA |
105Kb/6P |
Short circuit protection reduces the short circuit input current to under 50mA. Autosense function compensates for any losses in long circuit loops. |
KEC(Korea Electronics) |
KGT15N135NDH |
1Mb/8P |
KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. |
Fairchild Semiconductor |
FGD3N60UNDF |
1Mb/10P |
Using advanced NPT IGBT technology, Fairchild짰?셲 the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential. |
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