制造商 | 部件名 | 数据表 | 功能描述 |
Vishay Siliconix
|
S525T-GS08 |
201Kb/7P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.6, 08-Sep-08 |
S525T |
200Kb/7P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.6, 08-Sep-08 |
BF543 |
157Kb/3P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.5, 05-Jul-05 |
BF996S |
133Kb/8P |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
Vishay Telefunken
|
BF960 |
570Kb/10P |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay Siliconix
|
BF994S |
119Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
BF966SA |
161Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05 |
BF995 |
116Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
BF961 |
160Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04 |
Vishay Telefunken
|
BF966 |
396Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode |
Vishay Siliconix
|
BF964S |
127Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
BF988 |
139Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99 |
BF998 |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
BF966S |
127Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
BF998 |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
BF988 |
157Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.7, 11-Sep-08 |
TEMIC Semiconductors
|
BF996S |
68Kb/5P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
New Jersey Semi-Conduct...
|
BF961 |
95Kb/2P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Renesas Technology Corp
|
NE321000 |
215Kb/14P |
HETERO JUNCTION FIELDEFFECT TRANSISTOR 1999 |
SHIKUES Electronics
|
SDW2065 |
963Kb/5P |
These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology. |