MOSFET Datasheet(PDF) - PMCPB5530X_15 - NXP Semiconductors

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MOSFET 数据表, PDF

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搜索关键字 : 'MOSFET' - 的资料共: 426 (1/22) Pages

制造商	部件名	数据表	功能描述
NXP Semiconductors	PMCPB5530X	1Mb/18P	20 V, complementary Trench MOSFET Rev. 1-26 June 2012
	PMCM4401VNE	325Kb/15P	12V, N-channel Trench MOSFET 24 July 2015
	BF1208	167Kb/22P	Dual N-channel dual gate MOSFET Rev. 01-16 March 2005
	PMZB550UNE	224Kb/15P	30 V, N-channel Trench MOSFET 25 March 2015
	PMV65XPEA	245Kb/16P	20 V, P-channel Trench MOSFET 27 November 2014
	PMV75UP	279Kb/15P	20 V, P-channel Trench MOSFET 25 April 2014
	PMV250EPEA	251Kb/16P	40 V, P-channel Trench MOSFET 20 June 2014
	PMXB43UNE	253Kb/15P	20 V, N-channel Trench MOSFET 19 September 2013
	PMZ390UNE	221Kb/14P	30 V, N-channel Trench MOSFET 12 March 2015
	PMZ550UNE	224Kb/15P	30 V, N-channel Trench MOSFET 25 March 2015
	PMZ950UPE	237Kb/15P	20 V, P-channel Trench MOSFET 10 July 2014
	PMV16XN	263Kb/15P	20 V, N-channel Trench MOSFET 11 November 2014
	PMPB11EN	273Kb/15P	30 V N-channel Trench MOSFET 14 January 2014
	PMZB150UNE	228Kb/15P	20 V, N-channel Trench MOSFET 24 March 2015
	PMXB360ENEA	225Kb/15P	80 V, N-channel Trench MOSFET 16 September 2013
	PMV48XPA	257Kb/15P	20 V, P-channel Trench MOSFET 10 March 2014
	BF1208D	253Kb/22P	Dual N-channel dual gate MOSFET Rev. 01-16 May 2007
	BF1210	252Kb/21P	Dual N-channel dual gate MOSFET Rev. 01-25 October 2006
	NX7002BKM	242Kb/16P	60 V, N-channel Trench MOSFET 3 December 2014
	PMCM6501VPE	367Kb/15P	12 V, P-channel Trench MOSFET 10 August 2015

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什么是 MOSFET

金属 - 氧化物 - 磁导体场效应晶体管（MOSFET）是一种用于控制高功率应用的功率半导体设备，例如在电源，电动机驱动器和逆变器中。

它是一种现场效应的晶体管（FET），这意味着它通过使用电场来控制其源和排水端之间的电流流动。

在MOSFET中，电流的流由充当栅极的薄金属氧化物膜控制，该薄膜由闸门隔离，通过薄绝缘层与设备的其余部分隔离。

栅极电压控制源和排水端子之间的通道的宽度，这决定了电流通过设备的流动。

MOSFET有两种主要类型：N通道和P通道。 N通道MOSFET具有带有N型材料的通道，而P通道MOSFET的通道具有掺杂P型材料的通道。

MOSFET具有比其他类型的电力半导体的几个优点，包括高输入阻抗，较低的州电阻，快速开关速度和高效率。

它们也具有高度的用途，可用于各种应用，例如电源，电动机驱动器和逆变器。

但是，MOSFET也有一些缺点，包括有限的电压等级以及需要控制设备的栅极驱动电路。

此外，它们容易受到热失控的影响，如果设备过热，可能会导致设备故障。

为了降低这种风险，MOSFET通常与其他组件（例如热保护设备或冷冻电路）结合使用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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