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THE 数据表, Datasheet

Nuvotem Talema(1)NXP Semiconductors(18)PACELEADER INDUSTRIAL(1)Pan Jit International Inc.(1)Panasonic Battery Group(5)Panasonic Semiconductor(43)Pasternack Enterprises, Inc.(1)PEAK electronics GmbH(2)Pentair plc. All rights reserved.(1)Pericom Semiconductor Corporation(2)PETERMANN-TECHNIK(1)PHOENIX CONTACT(618)PLX Technology(1)Polyfet RF Devices(1)Potato Semiconductor Corporation(2)Power Innovations Ltd(2)Power Integrations, Inc.(1)Power-One(1)Powerbox(2)PowerVolt Inc.(2)Protech Systems Co., Ltd.(21)Protek Devices(1)Pulse A Technitrol Company(6)Qimonda AG(1)QT Optoelectronics(1)Quantum Research Group(2)QUARTZCOM the communications company(1)Radiometrix Ltd(1)Ralston Instruments.(33)Realtek Semiconductor Corp.(1)Recom International Power(2)Red Lion Controls. Inc(2)Renesas Technology Corp(47)RF Micro Devices(2)RF Monolithics, Inc(3)RFHIC(14)rfsolutions.ltd(10)Richco, Inc.(1)Richtek Technology Corporation(31)RICOH electronics devices division(5)RMT Ltd.(13)Rochester Electronics(8)Rohm(29)Roithner LaserTechnik GmbH(17)Sames(4)Samsung semiconductor(45)Samtec, Inc(2)Sangdest Microelectronic (Nanjing) Co., Ltd(17)Sanken electric(16)Sanyo Semicon Device(24)Schurter Inc.(2)Seiko Instruments Inc(16)SemiHow Co.,Ltd.(3)Semikron International(1)Semtech Corporation(1)Seoul Semiconductor(14)Sharma Electro Components,Inc(1)Sharp Electrionic Components(7)SHIKE Electronics(6)Shoulder Electronics Limited.(262)Siemens Semiconductor Group(14)SiGe Semiconductor, Inc.(1)Silan Microelectronics Joint-stock(1)Silicon image(1)Silicon Laboratories(94)Silikron Semiconductor Co.,LTD.(1)Sitronix Technology Co., Ltd.(1)Skyworks Solutions Inc.(5)SL Power Electronics(15)SMSC Corporation(10)Soberton Inc.(44)Solarflare Communications, Inc.(2)Sony Corporation(3)Source Photonics, Inc.(2)SPANSION(43)Sparkle Power Inc.(1)Spectrum Microwave, Inc.(1)STANLEY ELECTRIC CO.,LTD.(6)Stanson Technology(42)STATEK CORPORATION(1)STMicroelectronics(795)Sumida Corporation(1)Suntan Capacitors(1)Supertex, Inc(1)Surge Components(3)Switchcraft, Inc.(2)Systemsensor advanced ideas.(1)Taiwan Memory Technology(7)Taiyo Yuden (U.S.A.), Inc(28)Taoglas antenna solutions(2)TDK Electronics(10)TE Connectivity Ltd(1182)TEMEX(23)TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS(10)Texas Instruments(72)Texas Instruments(85)THine Electronics, Inc.(12)THOR communications(24)Tiger Electronic Co.,Ltd(3)TOKO, Inc(3)Torex Semiconductor(2)Toshiba Semiconductor(35)Total Power International(1)Touchstone Semiconductor Inc(3)TRACO Electronic AG(15)Transcend Information. Inc.(1)TRINAMIC Motion Control GmbH & Co. KG.(1)TriQuint Semiconductor(3)
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搜索说明 : 'THE' - 的资料共l: 42 (1/3) 页
制造商部件名浏览功能描述

Stanson Technology
ST3422A The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN9926AA The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STN9926 The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STP4407 The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STC6332 The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9434 STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9527 STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2304SRG ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3407SRG ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2319SRG ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4925 STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4438 STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN6303 STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4403 STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2341A ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4822 STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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