TRENCH Datasheet(PDF) - S-LN7610DT1WG

制造商	部件名	数据表	功能描述
Leshan Radio Company	S-LN7610DT1WG	826Kb/6P	N-Channel Power Trench MOSFET
	LN7610DT1WG	822Kb/6P	N-Channel Power Trench MOSFET
	LNB86085DT0AG	395Kb/5P	N-Channel Power Trench MOSFET
	LNB8616DT0AG	426Kb/5P	N-Channel Power Trench MOSFET
	LN76076HDT1WG	1Mb/6P	N-Channel Power Trench MOSFET
	LP4935T1G	385Kb/5P	P-Channel MOSFET Low RDS(on) trench technology.
	LNP3604T1G	1Mb/4P	30 V Complementary Trench MOSFET P-Channel:VDS = -30V
	LNP2601T1G	713Kb/8P	20 V Complementary Trench MOSFET N-Channel:VDS = 20V
	LNP3707T1G	678Kb/4P	30 V Complementary Trench MOSFET P-Channel:VDS = -30V
	LDP4098T1G	335Kb/5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	LDP4953T1G	331Kb/5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	S-LNB8266DT1AG	658Kb/5P	N-Channel 60-V Power MOSFET Low RDS(on) trench technology.
	S-LNP2601T1G	2Mb/8P	20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V;
	LP4433T1G	567Kb/5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
	LN7308DT1WG	373Kb/3P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8206DT0AG	559Kb/5P	N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8408DT0AG	553Kb/7P	N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
	LP8233DT1AG	701Kb/5P	P-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology
	S-LNB8260DT1AG	434Kb/5P	N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.
	S-LPB8615DT0AG	275Kb/5P	P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology

TRENCH 数据表, PDF

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