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USING 数据表, PDF

搜索关键字 : 'USING' - 的资料共: 134 (1/7) Pages
制造商部件名数据表功能描述
Company Logo Img
Nexperia B.V. All right...
PSMN2R6-30YLC Datasheet pdf image
931Kb/15P
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 - 2 May 2011
PSMN3R2-30YLC Datasheet pdf image
933Kb/15P
N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 - 2 May 2011
PSMN1R2-30YLC Datasheet pdf image
931Kb/15P
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 1 - 3 May 2011
PSMN2R2-30YLC Datasheet pdf image
934Kb/15P
N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 02 - 3 May 2011
PSMN4R1-30YLC Datasheet pdf image
750Kb/14P
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology
12 February 2013
PSMN3R7-30YLC Datasheet pdf image
467Kb/16P
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 - 2 May 2011
PSMN023-40YLC Datasheet pdf image
339Kb/14P
N-channel 40 V 23m廓 logic level MOSFET in LFPAK using NextPower technology
PSMN038-100HS Datasheet pdf image
281Kb/12P
N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022
PSMN013-60HS Datasheet pdf image
281Kb/12P
N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022
PSMN028-100HS Datasheet pdf image
276Kb/12P
N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022
PSMN0R9-25YLC Datasheet pdf image
916Kb/15P
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 2 - 4 July 2011
PSMN2R2-25YLC Datasheet pdf image
930Kb/15P
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 1 - 2 May 2011
PSMN3R0-30MLC Datasheet pdf image
1Mb/14P
N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
Rev. 4 - 15 June 2012
PSMN3R7-25YLC Datasheet pdf image
471Kb/16P
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 - 2 May 2011
PSMN6R1-40HL Datasheet pdf image
340Kb/12P
N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022
PSMN8R5-40HS Datasheet pdf image
341Kb/12P
N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022
PSMN011-60HL Datasheet pdf image
280Kb/12P
N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022
PSMN014-40HLD Datasheet pdf image
287Kb/12P
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology
26 September 2022
PSMN014-60HS Datasheet pdf image
336Kb/12P
N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022
PSMN8R0-40HL Datasheet pdf image
345Kb/12P
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022

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什么是 USING


“使用”是电子组件的术语,通常指示用于哪种目的的电子组件。

例如,“使用电阻器”是指使用电阻器(R)。

电阻有能力调节电流的量,并且经常用于电子电路。

另一个示例是“使用电容器”。

电容器(C)是一种电子组件,可存储和消散电荷,并用于电子电路中的各种目的。

另外,使用了各种表达式,例如使用“使用”,“使用”和“使用”的“二极管”。

这些表示形式可用于理解,设计和构建电子组件。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。


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