| 制造商 | 部件名 | 浏览 | 功能描述 |
OKI electronic componet...
|
MSM53V1655F |
 |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM |
Sanyo Semicon Device
|
LC372100PP |
|
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
| LC35V1000BM |
|
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
Cypress Semiconductor
|
CY7S1049G |
|
4-Mbit (512K words × 8 bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) |
LG Semicon Co.,Ltd.
|
GM71C4403E |
|
1,048,576 Words x Bit Organization |
Elpida Memory
|
EBE51UD8AGFA |
|
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) |
| EDS2532AABH-6B |
|
256M bits SDRAM (8M words x 32 bits) |
| EBE11UD8AESA |
|
1GB DDR2 SDRAM SO-DIMM (128M words x 64 bits, 2 Ranks) |
Integrated Silicon Solu...
|
IS42S32800B |
|
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM |
OKI electronic componet...
|
MS81V04160A |
|
Dual FIFO (262,214 Words × 8 Bits) × 2 |
Elpida Memory
|
EDD2504AKTA |
|
256M bits DDR SDRAM (64M words x 4 bits) |
| EBD52UC8AKDA |
|
512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) |
| EBD21RD4ADNA-E |
|
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD10RD4ADFA |
|
1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
Sanyo Semicon Device
|
LC3564RM |
|
64K (8192 words x 8 bits) SRAM |
Elpida Memory
|
EBE11UD8AGSA |
|
1GB DDR2 SDRAM SO-DIMM (128M words x 64 bits, 2 Ranks) |
| EBE11ED8ABFA |
|
1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks) |
Zarlink Semiconductor I...
|
MJ2812 |
|
32 WORDS X 8 BIT FIFO MEMORY |
Toshiba Semiconductor
|
THM322020S-80 |
|
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE |
Sanyo Semicon Device
|
LC36256AL |
|
256 K (32768 words x 8 bits) SRAM |
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
